硒化锡(SnSe)作为一种环保型二维层状材料,其带隙特性通常被认为接近于直接带隙半导体,表明它的导带极小值和价带极大值非常接近或完全重合,具有优异的光电特性以及不错的光吸收系数。因此,SnSe薄膜适合用作光电材料,在光伏和光电器件中具有广泛的应用前景。本文首先介绍了SnSe材料的光电特性,其次探究了近几年国内外SnSe薄膜的研究进展,总结分析了SnSe薄膜制备技术,最后总结并展望了SnSe薄膜在太阳能电池、光电探测器等领域的应用状况。SnSe薄膜会在未来光伏和光电器件中发挥不可替代的作用。Tin selenide (SnSe), as an environmentally friendly two-dimensional layered material, is generally considered to have bandgap characteristics similar to direct bandgap semiconductors, indicating that its conduction band minimum and valence band maximum are very close or completely overlapped, and it has excellent optoelectronic properties and good light absorption coefficient. Therefore, SnSe thin films are suitable for use as optoelectronic materials and have broad application prospects in photovoltaics and optoelectronic devices. This article first introduces the optoelectronic properties of SnSe materials, then explores the research progress of SnSe thin films at home and abroad in the past years, summarizes thin film preparation technologies suitable for SnSe thin films, and finally summarizes and prospects the application status of SnSe thin films in solar cells, photodetectors and other fields. SnSe thin films will be play an irreplaceable role in photovoltaic and optoelectronic devices in the future.
